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<image 1>A transistor, which may be approximated as a hemispherical heat source of radius ro = 0.1 mm, is embedded in a large silicon substrate (k = 125 W/m\cdot K) and dissipates heat at a rate q. All boundaries of the silicon are maintained at an ambient temperature of T\infty= 27C,except for the top surface, which is well insulated.evaluate the surface temperature of the heat source for q =4 W.



(A) 340.93K


(B) 350.93K


(C) 360.93K


Answer with the option's letter from the given choices directly. No punctuation.


(A)


Difficulty: Medium

Subfield: Heat Transfer

Input

Input ID
9b68db8d-57a5-4788-8957-3a5f593a35e8
Created
February 15, 2024
Permission
Public