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<image 1>A transistor, which may be approximated as a hemispherical heat source of radius ro = 0.1 mm, is embedded in a large silicon substrate (k = 125 W/m K) and dissipates heat at a rate q. All boundaries of the silicon are maintained at an ambient temperature of T= 27C,except for the top surface, which is well insulated.evaluate the surface temperature of the heat source for q =4 W. (A) 340.93K (B) 350.93K (C) 360.93K Answer with the option's letter from the given choices directly. No punctuation. | (A) Difficulty: Medium Subfield: Heat Transfer |