Evaluation

Input	Output
<image 1>A transistor, which may be approximated as a hemispherical heat source of radius ro = 0.1 mm, is embedded in a large silicon substrate (k = 125 W/m $\cdot$ K) and dissipates heat at a rate q. All boundaries of the silicon are maintained at an ambient temperature of T $\infty$ = 27C,except for the top surface, which is well insulated.evaluate the surface temperature of the heat source for q =4 W. (A) 340.93K (B) 350.93K (C) 360.93K Answer with the option's letter from the given choices directly. No punctuation.	Google: Gemini Pro Vision 1.0 mmmu / Energy_and_PowerPublic (A) Difficulty: Medium Subfield: Heat Transfer

Input

Output

<image 1>A transistor, which may be approximated as a hemispherical heat source of radius ro = 0.1 mm, is embedded in a large silicon substrate (k = 125 W/m $\cdot$ K) and dissipates heat at a rate q. All boundaries of the silicon are maintained at an ambient temperature of T $\infty$ = 27C,except for the top surface, which is well insulated.evaluate the surface temperature of the heat source for q =4 W.

(A) 340.93K

(B) 350.93K

Answer with the option's letter from the given choices directly. No punctuation.

Google: Gemini Pro Vision 1.0

mmmu / Energy_and_PowerPublic

(A)

Difficulty: Medium

Subfield: Heat Transfer

Evaluation ID: 9e901b44-df57-472c-a4b3-44a657663c95
Created: February 21, 2024

Raw Output

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